{ { { ? { { { ? absolute maximum ratings symbol parameter value units v dss drain to source voltage 60 v i d continuous drain current(@t c = 25 c) 70 a continuous drain current(@t c = 100 c) 51 a i dm drain current pulsed (note 1) 280 a v gs gate to source voltage 25 v e as single pulsed avalanche energy (note 2) 800 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d total power dissipation(@t c = 25 c) 158 w derating factor above 25 c 1.05 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 175 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 0.95 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w SFP70N06 1/7 features low r ds (on) (0.015 ? )@v gs =10v low gate charge (typical 65nc) low crss (typical 150pf) improved dv/dt capability 100% avalanche tested maximum junction temperature range (175c) general description this power mosfet is produ ced using wisdom?s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. th is power mosfet is well suited for synchronous dc-dc converters and power management in portable and battery operated products. n-channel mosfet to-220 1 2 3 symbol 2. drain 3. source 1. gate wisdom technologies int?l june, 2004. rev. 0. copyright@wisdom technologies international, all rights reserved.
SFP70N06 electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c -0.06-v/c i dss zero gate voltage drain current v ds = 60v, v gs = 0v --1ua v ds = 48v, t c = 150 c --10ua i gss gate-source leakage, forward v gs = 25v, v ds = 0v 100 na gate-source leakage, reverse v gs = -25v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 35a - 0.013 0.015 ? dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 2200 2900 pf c oss output capacitance - 650 850 c rss reverse transfer capacitance - 150 195 dynamic characteristics t d(on) turn-on delay time v dd =30v, i d =35a, r g =50 ? see fig. 13. (note 4, 5) -3070 ns t r rise time - 60 130 t d(off) turn-off delay time - 125 260 t f fall time - 95 200 q g total gate charge v ds =48v, v gs =10v, i d =70a see fig. 12. (note 4, 5) -6585 nc q gs gate-source charge - 17 - q gd gate-drain charge(m iller charge) - 23 - source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --70 a i sm pulsed source current - - 280 v sd diode forward voltage i s =70a, v gs =0v - - 1.5 v t rr reverse recovery time i s =70a,v gs =0v,di f /dt=100a/us -62-ns q rr reverse recovery charge - 110 - nc notes 1. repeativity rating : pulse width limited by junction temperature 2. l = 250 uh, i as = 70a, v dd = 25v, r g = 0 ? , starting t j = 25c 3. isd 70a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 2/7 copyright@wisdom technologies international, all rights reserved.
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v gs = 10v v gs = 20v note : t j = 25 r ds(on) , drain-source on-resistance [m ? ] i d , drain current [a] 246810 10 0 10 1 10 2 175 o c 25 o c -55 o c notes : 1. v ds = 25v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0 10203040506070 0 2 4 6 8 10 12 v ds = 30v v ds = 48v note : i d = 70.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 5 10 15 20 25 30 35 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 c rss c oss c iss notes : 1. v gs = 0v 2. f=1mhz c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds , drain-source voltage [v] 3/7 fig 3. on resistance variation vs. drain current and gate voltage fig 4. on state current vs. allowable case temperature fig 5. capacitance characteristics fig 6. gate charge characteristics SFP70N06 fig 1. on-state characteristics fig 2. transfer characteristics copyright@wisdom technologies international, all rights reserved.
10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 0.95 /w m ax. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 i d' drain current [a] t c' case temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 35 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] fig 9. maximum safe operating area fig 10. maximum drain current vs. case temperature fig 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature fig 8. on-resistance variation vs. junction temperature SFP70N06 4/7 copyright@wisdom technologies international, all rights reserved.
5/7 fig 13. switching time test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms SFP70N06 fig. 12. gate charge test circuit & waveforms e a s =l l i a s 2 ---- 2 1 -------------------- b v d s s -- v d d b v d s s e a s =l l i a s 2 ---- 2 1 e a s =l l i a s 2 ---- 2 1 ---- 2 1 -------------------- b v d s s -- v d d b v d s s v d d v d s b v d s s t p v d d i a s v d s (t ) i d (t) t im e b v d s s t p v d d i a s v d s (t ) i d (t) t im e 1 0 v d u t r g l l i d i d c h a r g e v g s 1 0 v q g q g s q g d 1 m a v g s d u t v d s 3 0 0 n f 5 0 k 2 0 0 n f 1 2 v s a m e t yp e a s d u t c h a r g e v g s 1 0 v q g q g s q g d c h a r g e v g s 1 0 v q g q g s q g d 1 m a v g s d u t v d s 3 0 0 n f 5 0 k 2 0 0 n f 1 2 v s a m e t yp e a s d u t v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v d d ( 0 .5 ra te d v d s ) 1 0 v v d s r l d u t p u ls e g e n e ra to r v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v d d ( 0 .5 ra te d v d s ) v v d s r l d u t p u ls e g e n e ra to r r g v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v d d ( 0 .5 ra te d v d s ) 1 0 v v d s r l d u t p u ls e g e n e ra to r v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v in v d s 1 0 % 9 0 % t d (o n ) t r t o n t o ff t d (o ff) t f v d d ( 0 .5 ra te d v d s ) v v d s r l d u t p u ls e g e n e ra to r r g copyright@wisdom technologies international, all rights reserved.
SFP70N06 dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v d d l l i s i s fig. 15. peak diode recovery dv/dt test circuit & waveforms 10 v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward volta g e dro p v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- 10 v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward volta g e dro p v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 6/7 copyright@wisdom technologies international, all rights reserved.
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.25 1.55 0.049 0.061 n 0.45 0.6 0.018 0.024 o 0.6 1.0 0.024 0.039 ? 3.6 0.142 to-220 package dimension SFP70N06 1. gate 2. drain 3. source a b c i g l 1 m e f h k n o 2 3 j d copyright@wisdom technologies international, all rights reserved. 7/7
|
